IRF530NSTRLPBF Infineon Technologies MOSFET - 商品詳細情報
Search Alternative Products
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IRF530NSTRLPBF
- Product classification
- MOSFET
- Lifecycle Status
- 量产中
- RoHS
- RoHS
- Series name
- HEXFET(R)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-263-3|D2Pak|TO-263AB
- Drain to Source voltage
- 100V
- Continuous drain current
- 17A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 90mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 37nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 920pF
- Power consumption
- 3.8|70W
- Operating temperature range
- -55 to 175C
- Other names
- IRF530NSTRLPBFDKR | IRF530NSTRLPBFCT | IRF530NSTRLPBFTR | IRF530NSTRLPBF-ND | SP001563332
- Type
- Power MOSFET
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 800
If you find an error in the product information, please let us know here.
Documents
