PSMN6R1-30YLDX Nexperia MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Nexperia
- Product name
- PSMN6R1-30YLDX
- Product classification
- MOSFET
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- SC-100|SOT-669
- Drain to Source voltage
- 30V
- Continuous drain current
- 66A
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5|10V
- Drain to Source on-state resistance
- 6mOhm
- Vgs(th)
- 2.2 V
- Gate Charge (Qg)
- 13.6nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 817pF
- Power consumption
- 47W
- Operating temperature range
- -55 to 175C
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