OMRON G3VM

G3VM-21MT is the first electronic component in the world*1 to adopt a "T-type circuit structure"*2. With T-type circuit structure consisting of compact size and longer lifecycle
solid state relays that output signals using no physical contact, the relay module minimizes the leakage current*3 which has long been a problem with semiconductor test equipment.
G3VM-21MT allows high-precision measurement and improves productivity of electronic components.

(*1) The world's first relay module adopting a "T-type circuit structure" in which several different MOS FET relays are combined, as of April 2019, according to our own research.
(*2) A circuit structure commonly used in electronic devices such as an attenuator, to minimize the leakage current.
(*3) A condition that occurs inside the electric circuit where current leaks through the insulation, which otherwise should have stopped electricity from passing through.

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