PSMN009-100B,118 Nexperia MOSFET - 商品詳細情報
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PSMN009-100B,118
PSMN009-100B,118
HTSN : 8541290095
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| Data Sheet | |
|---|---|
| Datasheet | EN_Nexperia B.V._Datasheet_20150226080233218 |
Specifications
- Manufacturer name
- Nexperia
- Product name
- PSMN009-100B,118
- Product classification
- MOSFET
- Lifecycle Status
- Obsolete
- RoHS
- RoHS
- Series name
- TrenchMOS(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-263-3|D2Pak|TO-263AB
- Drain to Source voltage
- 100V
- Continuous drain current
- 75A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 8.8mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 156nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 8250pF
- Power consumption
- 230W
- Operating temperature range
- -55 to 175C
- Type
- Power MOSFET
- Related Products
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