2SK3566(STA4,Q,M) Toshiba MOSFET - 商品詳細情報
Search Alternative Products
Specifications
- Manufacturer name
- Toshiba
- Product name
- 2SK3566(STA4,Q,M)
- Product classification
- MOSFET
- Lifecycle Status
- NRND
- RoHS
- RoHS대응
- Series name
- π-MOSIV
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-220-3
- Drain to Source voltage
- 900V
- Continuous drain current
- 2.5A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 6.4Ohm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 12nC
- Vgs (Max)
- 30V
- Input Capacitance (Ciss)
- 470pF
- Power consumption
- 40W
- Operating temperature range
- 150C
- Other names
- 2SK3566
- Remarks
- 世代：π-MOSIV / ゲート入力電荷量：12nC(typ.) / 入力容量：470pF(typ.)
- Product name
- 小信号MOS FET 1素子
- Type
- Power MOSFET
- Manufacturer packaging quantity
- 50
If you find an error in the product information, please let us know here.
Documents
