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BAS12504WH6327XTSA1  Infineon Technologies  Schottky Barrier Diode  -  商品詳細情報

BAS12504WH6327XTSA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

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BAS12504WH6327XTSA1

BAS12504WH6327XTSA1

Infineon Technologies

Schottky Barrier Diode

Infineon Technologies

Schottky Barrier Diode

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产品概要

Diode Schottky 25V 0.1A Automotive 3-Pin SOT-323 T/R

生命周期状态 : Obsolete
ECCN EAR99

HTSN 8541100070

产品概要

Diode Schottky 25V 0.1A Automotive 3-Pin SOT-323 T/R

生命周期状态 : Obsolete
ECCN EAR99

HTSN 8541100070

产品文档

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规格

制造商名称
Infineon Technologies
制品名
BAS12504WH6327XTSA1
制品分类
Schottky Barrier Diode
生命周期状态
Obsolete
RoHS
符合RoHS标准
Average rectified current
0.1A
Package
SC-70|SOT-323
Other names
BAS 125-04W H6327-ND | 2156-BAS12504WH6327XTSA1-448 | BAS12504WH6327XTSA1TR | SP000749598 | 448-BAS12504WH6327XTSA1CT | 448-BAS12504WH6327XTSA1DKR | BAS 125-04W H6327 | 448-BAS12504WH6327XTSA1TR | BAS12504WH6327XTSA1TR-ND
Current - Average Rectified Io per Diode
100mA(DC)
Current - Reverse Leakage with Vr Applied
150nA@25V
Diode Configuration
1Series Connection
Diode type
Schottky
Mounting Type
Surface Mount
Operating temperature range
150 C (Max)
Package (Supplier)
PG-SOT323-3
Spannung – DC Reverse Vr Max
25V
Spannung – Vorwärts (Vf) Max
950mV@35mA
Speed
Small Signal =< 200mA(Io)|Any Speed
原厂包装
Tape & Reel
制造商数量
3000
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