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IPD90N10S406ATMA1  Infineon Technologies  MOSFET  -  商品詳細情報

IPD90N10S406ATMA1

Infineon Technologies

MOSFET

IPD90N10S406ATMA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

Added to bookmarks.

IPD90N10S406ATMA1

IPD90N10S406ATMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

Added to bookmarks.
Product Overview

N-Channel 100 V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313

Lifecycle Status : Active
ECCN EAR99

HTSN 8541290095

Product Overview

N-Channel 100 V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313

Lifecycle Status : Active
ECCN EAR99

HTSN 8541290095

Product Information

Related Videos
Data sheet
Design/Simulation Data
Other Documents

Specifications

Manufacturer name
Infineon Technologies
Product name
IPD90N10S406ATMA1
Product classification
MOSFET
Lifecycle Status
Active
RoHS
RoHS
Series name
Automotive/AEC-Q101/OptiMOS(TM)
Field-effect transistor type
N-CH
Technology System
MOSFET(Metal Oxide)
Drain to Source voltage
100V
Continuous drain current
90A
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source on-state resistance
6.7mOhm
Vgs(th)
3.5 V
Gate Charge (Qg)
68nC
Vgs (Max)
20V
Input Capacitance (Ciss)
4870pF
Power consumption
136W
Operating temperature range
-55 to 175C
Other names
IPD90N10S406ATMA1-ND | 448-IPD90N10S406ATMA1TR | 448-IPD90N10S406ATMA1CT | 448-IPD90N10S406ATMA1DKR | SP001101896
Manufacturer Packaging
Tape & Reel
Manufacturer packaging quantity
2500

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