IPD90N10S406ATMA1 Infineon Technologies MOSFET - 商品詳細情報
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IPD90N10S406ATMA1
IPD90N10S406ATMA1
N-Channel 100 V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313
HTSN : 8541290095
Search Alternative Products
N-Channel 100 V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3-313
HTSN : 8541290095
| Data Sheet | |
|---|---|
| Datasheet | EN_Infineon Technologies_Datasheet_20230223013831419 |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IPD90N10S406ATMA1
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- Automotive/AEC-Q101/OptiMOS(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Drain to Source voltage
- 100V
- Continuous drain current
- 90A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 6.7mOhm
- Vgs(th)
- 3.5 V
- Gate Charge (Qg)
- 68nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 4870pF
- Power consumption
- 136W
- Operating temperature range
- -55 to 175C
- Other names
- IPD90N10S406ATMA1-ND | 448-IPD90N10S406ATMA1TR | 448-IPD90N10S406ATMA1CT | 448-IPD90N10S406ATMA1DKR | SP001101896
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 2500
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