PHB27NQ10T,118 Nexperia MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Nexperia
- Product name
- PHB27NQ10T,118
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- TrenchMOS(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-263-3|D2Pak|TO-263AB
- Drain to Source voltage
- 100V
- Continuous drain current
- 28A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 50mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 30nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 1240pF
- Power consumption
- 107W
- Operating temperature range
- -55 to 175C
- Type
- Power MOSFET
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 4800
- Related Products
-
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