制造商名称

Nexperia

制品名

PHKD6N02LT,518

制品分类

MOSFET

生命周期状态

Active

RoHS

符合RoHS标准

Series name

TrenchMOS(TM)

Field-effect transistor type

2N-Channel(Dual)

Package

8-SOIC(0.154inch|3.9mm)

Drain to Source voltage

20V

Continuous drain current

10.9A

Drain to Source on-state resistance

20mOhm

Mounting Type

Surface Mount

Current - Drain (Id) (25°C)

10.9A

FET Feature

Logic Level Gate

Gate Charge - (when applying Vgs)

15.3nC@5V

Input Capacitance - (Ciss when Vds is applied)

950pF@10V

On Resistance - (Rds when Id,Vgs is applied)

20mOhm@3A|5V

On Voltage - (Vgs when Id is applied)

1.5V@250uA

Operating temperature

-55 to 150C

Package (Supplier)

8-SO

Power-Maximum

4.17W

Type

Power MOSFET

如果产品信息中有错误，请在此处指出。