QS8K2TR Rohm MOSFET - 商品詳細情報
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QS8K2TR
QS8K2TR
Trans MOSFET N-CH Si 30V 3.5A 8-Pin TSMT T/R
HTSN : 8541290095
Search Alternative Products
Trans MOSFET N-CH Si 30V 3.5A 8-Pin TSMT T/R
HTSN : 8541290095
| Datasheet | EN_Rohm_データシート_20161101101043140 |
| Datasheet | EN_Rohm_Datasheet_20180228141133109 |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | EN_Rohm_データシート_20161101101043140 |
| Datasheet | EN_Rohm_Datasheet_20180228141133109 |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Rohm
- Product name
- QS8K2TR
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Field-effect transistor type
- 2N-Channel(Dual)
- Package
- 8-SMD|Flat Lead
- Drain to Source voltage
- 30V
- Continuous drain current
- 3.5A
- Mounting Type
- Surface Mount
- Other names
- QS8K2DKR | QS8K2TRCT-ND | QS8K2TRCT | QS8K2TRDKR | QS8K2TRDKR-ND | QS8K2CT
- Eingangskapazität – (Ciss, wenn Vds angelegt wird)
- 285pF@10V
- Einschaltspannung – (Vgs bei angelegter Id)
- 1.5V@1mA
- Einschaltwiderstand – (Rds, wenn Id,Vgs angewendet wird)
- 54mOhm@3.5A|4.5V
- FET Feature
- Logic Level Gate
- Gate-Ladung – (bei Anwendung von Vgs)
- 4.6nC@4.5V
- Operating temperature
- 150C
- Paket (Lieferant)
- TSMT8
- Power-Maximum
- 1.25W
- Product name
- 2.5V Drive Nch+Nch MOSFET
- Strom – Entleerung (Id) (25 °C)
- 3.5A
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
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