QS8K2TR Rohm MOSFET - 商品詳細情報
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QS8K2TR
QS8K2TR
Trans MOSFET N-CH Si 30V 3.5A 8-Pin TSMT T/R
HTSN : 8541290095
Search Alternative Products
Trans MOSFET N-CH Si 30V 3.5A 8-Pin TSMT T/R
HTSN : 8541290095
| Datasheet | EN_Rohm_データシート_20161101101043140 |
| Datasheet | EN_Rohm_Datasheet_20180228141133109 |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | EN_Rohm_データシート_20161101101043140 |
| Datasheet | EN_Rohm_Datasheet_20180228141133109 |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Rohm
- Product name
- QS8K2TR
- Product classification
- MOSFET
- Lifecycle Status
- 量产中
- RoHS
- RoHS
- FET类型
- 2N-Channel(Dual)
- 封装
- 8-SMD|Flat Lead
- 漏源电压
- 30V
- 连续漏极电流
- 3.5A
- Mounting Type
- Surface Mount
- 其它名称
- QS8K2DKR | QS8K2TRCT-ND | QS8K2TRCT | QS8K2TRDKR | QS8K2TRDKR-ND | QS8K2CT
- FET Feature
- Logic Level Gate
- Product name
- 2.5V Drive Nch+Nch MOSFET
- 动作温度
- 150C
- 包装(供应商)
- TSMT8
- 导通电压 -(施加 Id 时的 Vgs)
- 1.5V@1mA
- 导通电阻 -(施加 Id、Vgs 时的 Rds)
- 54mOhm@3.5A|4.5V
- 最大功率
- 1.25W
- 栅极电荷 -(施加 Vgs 时)
- 4.6nC@4.5V
- 电流 - 漏极 (Id) (25°C)
- 3.5A
- 输入电容 -(施加 Vds 时的 Ciss)
- 285pF@10V
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
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