BAS4006E6327HTSA1 Infineon Technologies Schottky Barrier Diode - 商品詳細情報
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스펙
- 상품명
- BAS4006E6327HTSA1
- 제품 분류
- Schottky Barrier Diode
- 라이프 사이클
- Active
- RoHS
- RoHS
- Average rectified current
- 0.12A
- Package
- TO-236-3|SC-59|SOT-23-3
- Other names
- IFEINFBAS4006E6327HTSA1 | BAS4006 | BAS4006INCT-ND | BAS4006E6327HTSA1DKR | BAS4006INDKR-ND | BAS4006XTINTR | BAS4006E6327HTSA1TR | BAS 40-06 E6327 | BAS4006INTR | BAS4006E6327 | BAS4006INCT-NDR | BAS4006XTINCT | BAS4006E6327BTSA1 | BAS4006INTR-ND | BAS4006INDKR | BAS4006E6327HTSA1CT | BAS4006XTINTR-ND | BAS4006INCT | BAS4006INTR-NDR | BAS4006XTINCT-ND | BAS4006E6327XT | SP000010239 | 2156-BAS4006E6327HTSA1 | BAS4006INDKR-NDR
- Current - Average Rectified Io per Diode
- 120mA(DC)
- Current - Reverse Leakage with Vr Applied
- 1uA@30V
- Diode Configuration
- 1Pair Common Anode
- Diode type
- Schottky
- Mounting Type
- Surface Mount
- Operating temperature range
- 150 C (Max)
- Package (Supplier)
- SOT-23-3
- Reverse recovery time
- 100ps
- Spannung – DC Reverse Vr Max
- 40V
- Spannung – Vorwärts (Vf) Max
- 1V@40mA
- Speed
- Small Signal =< 200mA(Io)|Any Speed
- 제조업체 포장
- Tape & Reel
- 제조업체 포장 수량
- 3000
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