制造商名称

Rohm

制品名

SCT3022KLGC11

制品分类

MOSFET

生命周期状态

Active

RoHS

符合RoHS标准

Field-effect transistor type

N-CH

Technology System

SiCFET(Silicon Carbide)

Drain to Source voltage

1200V

Continuous drain current

95A

Drive Voltage (Max Rds On, Min Rds On)

18V

Drain to Source on-state resistance

28.6mOhm

Vgs(th)

5.6 V

Gate Charge (Qg)

178nC

Vgs (Max)

+22|-4V

Input Capacitance (Ciss)

2879pF

Power consumption

427W

Operating temperature range

175C

原厂包装

Tube

制造商数量

450

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