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IGLD60R190D1AUMA1  Infineon Technologies  MOSFET  -  商品詳細情報

IGLD60R190D1AUMA1

Infineon Technologies

MOSFET

IGLD60R190D1AUMA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

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IGLD60R190D1AUMA1

IGLD60R190D1AUMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

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ECCN EAR99
ECCN EAR99

Product Information

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Specifications

Manufacturer name
Infineon Technologies
Product name
IGLD60R190D1AUMA1
Product classification
MOSFET
RoHS
RoHS
Series name
CoolGaN(TM)
Field-effect transistor type
N-CH
Technology System
MOSFET(Metal Oxide)
Drain to Source voltage
600V
Continuous drain current
10A
Vgs(th)
1.6 V
Vgs (Max)
-10V
Input Capacitance (Ciss)
157pF
Power consumption
62.5W
Operating temperature range
-55 to 150C

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