PBRN113ZT,215 Nexperia Bipolar Transistor (BJT) - 商品詳細情報
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PBRN113ZT,215
PBRN113ZT,215
PBRN113ZT/SOT23/TO-236AB
HTSN : 8541210095
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| Data Sheet | |
|---|---|
| Datasheet | EN_Nexperia B.V._Datasheet_20141231143702956 |
| Datasheet | EN_Nexperia B.V._Datasheet_20180312163255933 |
Specifications
- Manufacturer name
- Nexperia
- Product name
- PBRN113ZT,215
- Product classification
- Bipolar Transistor (BJT)
- Lifecycle Status
- Active
- RoHS
- RoHS
- Transistor type
- NPN-Prebias
- Collector current
- 700mA
- DC electricity gain
- 300@50mA@5V|500@300mA@5V|500@600mA@5V|450@800mA@5V
- Collector-emitter voltage
- 40V
- Package
- TO-236-3|SC-59|SOT-23-3
- Current-Collector (Ic) (maximum)
- 600mA
- Current-Collector cutoff (maximum)
- 500nA
- DC current gain (hFE) (minimum)
- 500@300mA,5V
- Mounting Type
- Surface Mount
- Package (Supplier)
- TO-236 AB
- Power-Maximum
- 250mW
- Resistance-Base (R1)
- 1kOhms
- Resistance-Emitter base (R2)
- 10kOhms
- Type
- NPN
- Vce Saturation (maximum)
- 1.15V@8mA,800mA
- Voltage-Collector-emitter breakdown (maximum)
- 40V
- Manufacturer packaging quantity
- 3000
- Related Products
-
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