PBRP113ET,215 Nexperia Bipolar Transistor (BJT) - 商品詳細情報

PBRP113ET,215

Nexperia

Bipolar Transistor (BJT)

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PBRP113ET,215

Nexperia

Bipolar Transistor (BJT)

Nexperia

Bipolar Transistor (BJT)

产品概要

PBRP113ET/SOT23/TO-236AB

生命周期状态 : 量产中

ECCN : EAR99

HTSN : 8541210095

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产品概要

PBRP113ET/SOT23/TO-236AB

生命周期状态 : 量产中

ECCN : EAR99

HTSN : 8541210095

产品文档

3D CAD情報
- SamacSys
占用空间/符号/3D CAD信息
PCN/PDN(EOL)信息

数据表
规格书(English)	EN_Nexperia B.V._Datasheet_20150227160606822
规格书(English)	EN_Nexperia B.V._Datasheet_20180216115555357

规格

制造商名称: Nexperia

制品名: PBRP113ET,215

制品分类: Bipolar Transistor (BJT)

生命周期状态: 量产中

RoHS: 符合RoHS标准

晶体管类型: PNP-Prebias

收集器电流: 600mA

直流电流増宽度率: 40@50mA@5V|130@300mA@5V|140@600mA@5V

封装: TO-236-3|SC-59|SOT-23-3

收集器发射器电压: 40V

Mounting Type: Surface Mount

Vce 饱和度（最大值）: 750mV@6mA,600mA

包装（供应商）: TO-236 AB

最大功率: 250mW

电压-集电极-发射极击穿（最大值）: 40V

电阻发射器基极 (R2): 1kOhms

直流电流增益 (hFE)（最小值）: 130@300mA,5V

类型: PNP

阻力基础 (R1): 1kOhms

集流器 (Ic)（最大值）: 600mA

集流器截止（最大值）: 500nA

制造商数量: 3000

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C1S产品编号
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C1S537101353428

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PBRP113ET,215 Nexperia Bipolar Transistor (BJT) - 商品詳細情報

PBRP113ET,215

PBRP113ET,215

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PBRP113ET,215 Nexperia Bipolar Transistor (BJT) - 商品詳細情報

PBRP113ET,215

PBRP113ET,215

规格