PSMN7R8-120ESQ Nexperia MOSFET - 商品詳細情報
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PSMN7R8-120ESQ
PSMN7R8-120ESQ
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Lifecycle Status : Obsolete
ECCN
: EAR99
HTSN : 8541290080
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Data sheet
Design/Simulation Data
Other Documents
| Data Sheet | |
|---|---|
| Datasheet | EN_Nexperia B.V._Datasheet_20180216114902643 |
Specifications
- Manufacturer name
- Nexperia
- Product name
- PSMN7R8-120ESQ
- Product classification
- MOSFET
- Lifecycle Status
- Obsolete
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-262-3|I2Pak|TO-262AA
- Drain to Source voltage
- 120V
- Continuous drain current
- 70A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 7.9mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 167nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 9473pF
- Power consumption
- 349W
- Operating temperature range
- -55 to 175C
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