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BSC320N20NS3GATMA1  Infineon Technologies  MOSFET  -  商品詳細情報

BSC320N20NS3GATMA1

Infineon Technologies

MOSFET

BSC320N20NS3GATMA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

Added to bookmarks.

BSC320N20NS3GATMA1

BSC320N20NS3GATMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

Added to bookmarks.
Product Overview

N-Channel 200 V 36A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1

Lifecycle Status : Active
ECCN EAR99

HTSN 8541290095

Product Overview

N-Channel 200 V 36A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1

Lifecycle Status : Active
ECCN EAR99

HTSN 8541290095

Product Information

Related Videos
Data sheet
Design/Simulation Data
Other Documents

Specifications

Manufacturer name
Infineon Technologies
Product name
BSC320N20NS3GATMA1
Product classification
MOSFET
Lifecycle Status
Active
RoHS
RoHS
Series name
OptiMOS(TM)
Field-effect transistor type
N-CH
Technology System
MOSFET(Metal Oxide)
Package
8-PowerTDFN
Drain to Source voltage
200V
Continuous drain current
36A
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source on-state resistance
32mOhm
Vgs(th)
4 V
Gate Charge (Qg)
29nC
Vgs (Max)
20V
Input Capacitance (Ciss)
2350pF
Power consumption
125W
Operating temperature range
-55 to 150C
Other names
BSC320N20NS3 GDKR | BSC320N20NS3 G-ND | SP000676410 | BSC320N20NS3GATMA1CT | BSC320N20NS3 GDKR-ND | BSC320N20NS3 GCT-ND | BSC320N20NS3 GCT | BSC320N20NS3GATMA1TR | BSC320N20NS3 GTR-ND | BSC320N20NS3G | BSC320N20NS3 GTR | BSC320N20NS3 G | BSC320N20NS3GATMA1DKR
Type
Power MOSFET
Manufacturer Packaging
Tape & Reel
Manufacturer packaging quantity
5000

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