DDTC114YCA-7-F Diodes Bipolar Transistor (BJT) - 商品詳細情報

DDTC114YCA-7-F

Diodes

Bipolar Transistor (BJT)

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DDTC114YCA-7-F

Diodes

Bipolar Transistor (BJT)

Diodes

Bipolar Transistor (BJT)

Produktübersicht

Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R

Lifecycle Status : Active

ECCN : EAR99

HTSN : 8541210095

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Produktübersicht

Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R

Lifecycle Status : Active

ECCN : EAR99

HTSN : 8541210095

Product Information

Datenblatt
3D CAD情報
- SamacSys
Footprint/Symbol/3D CAD Information
PCN/PDN(EOL)

Data Sheet
Datasheet	EN_Diodes_Datasheet_20150421221939889

Specifications

Herstellername: Diodes

Produktname: DDTC114YCA-7-F

Produkt Klassifikation: Bipolar Transistor (BJT)

Lifecycle Status: Active

RoHS: RoHS

Transistor type: NPN-Prebias

Collector current: 100mA

DC electricity gain: 68@5mA|5V

Collector-emitter voltage: 50V

Package: TO-236-3|SC-59|SOT-23-3

Other names: DDTC114YCA-FDIDKR | DDTC114YCA-FDITR | DDTC114YCA-FDICT | DDTC114YCA7F

Current-Collector (Ic) (maximum): 100mA

Current-Collector cutoff (maximum): 500nA

DC current gain (hFE) (minimum): 68@5mA,5V

Frequency-Transition: 250MHz

Mounting Type: Surface Mount

Package (Supplier): SOT-23-3

Power-Maximum: 200mW

Rated power: 200mW

Resistance-Base (R1): 10kOhm

Resistance-Emitter base (R2): 47kOhm

Type: NPN

Vce Saturation (maximum): 300mV@250uA|5mA

Voltage-Collector-emitter breakdown (maximum): 50V

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RoHS 2011/65/EU amended by 2015/863 Compliant

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DDTC114YCA-7-F Diodes Bipolar Transistor (BJT) - 商品詳細情報

DDTC114YCA-7-F

DDTC114YCA-7-F

Specifications

Bulk Search Function

・Search in bulk with your existing part list

・Search based on multiple keywords and specs.

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DDTC114YCA-7-F Diodes Bipolar Transistor (BJT) - 商品詳細情報

DDTC114YCA-7-F

DDTC114YCA-7-F

Specifications