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DTA023JUBTL  Rohm  Pre-Biased Bipolar Transistor  -  商品詳細情報

DTA023JUBTL Rohm

The images are for reference only. For the precise specifications, refer to the product specifications.

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DTA023JUBTL

DTA023JUBTL

Rohm

Pre-Biased Bipolar Transistor

Rohm

Pre-Biased Bipolar Transistor

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产品概要

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount UMT3F

生命周期状态 : Active
ECCN EAR99

HTSN 8541210075

产品概要

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount UMT3F

生命周期状态 : Active
ECCN EAR99

HTSN 8541210075

产品文档

Related Videos
设计、模拟用数据
Symbol/Footprint/3D Model(UltraLibrarian) Download from Ultra Librarian
其他资料
Data Sheet
Datasheet EN_Rohm_データシート_20161101101043883
Datasheet EN_Rohm_Datasheet_20210617195236048
Environmental and Reliability Data
Other Environmental and Reliability Data Moisture Sensitivity Level
Design and Simulation Data
Symbol/Footprint/3D Model(UltraLibrarian) Download from Ultra Librarian

规格

制造商名称
Rohm
制品名
DTA023JUBTL
制品分类
Pre-Biased Bipolar Transistor
生命周期状态
Active
RoHS
RoHS
Transistor type
PNP-Prebias
Collector-emitter voltage
50V
Collector current
100mA
Package
SC-85
Other names
DTA023JUBTLDKR | DTA023JUBTLTR | DTA023JUBTLCT
Current-Collector (Ic) (maximum)
100mA
DC current gain (hFE) (minimum)
80@5mA,10V
DC electricity gain
80@5mA|10V
Frequency-Transition
250MHz
Mounting Type
Surface Mount
Package (Supplier)
UMT3F
Power-Maximum
200mW
Rated power
200mW
Resistance-Base (R1)
2.2kOhm
Resistance-Emitter base (R2)
47kOhm
Series name
PNP Digital transistor (with built-in resistors)
Vce Saturation (maximum)
150mV@500uA|5mA
Voltage-Collector-emitter breakdown (maximum)
50V
原厂包装
Tape & Reel
制造商数量
3000

如果产品信息中有错误,请在此处指出。

产品文档