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BAS4006WH6327XTSA1  Infineon Technologies  Schottky Barrier Diode  -  商品詳細情報

BAS4006WH6327XTSA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

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  • BAS4006WH6327XTSA1

    BAS4006WH6327XTSA1

    Infineon Technologies

    Schottky Barrier Diode

    Infineon Technologies

    Schottky Barrier Diode

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  • 产品概要

    Diode Array 1 Pair Common Anode 40 V 120mA (DC) Surface Mount SC-70, SOT-323

    生命周期状态 : 量产中
    ECCN EAR99

    HTSN 8541100070

    产品概要

    Diode Array 1 Pair Common Anode 40 V 120mA (DC) Surface Mount SC-70, SOT-323

    生命周期状态 : 量产中
    ECCN EAR99

    HTSN 8541100070

    产品文档

    Related Videos
    数据表
    设计、模拟用数据
    其他资料
    数据表
    规格书(English)
    环境和可靠性数据
    构成物质清单(English) MCDS_2013-08-29_13-08-28_MA000845632_PG-SOT323-3-1.pdf

    规格

    制造商名称
    Infineon Technologies
    制品名
    BAS4006WH6327XTSA1
    制品分类
    Schottky Barrier Diode
    生命周期状态
    量产中
    RoHS
    符合RoHS标准
    平均整流电流
    0.12A
    封装
    SC-70|SOT-323
    其它名称
    BAS 40-06W H6327 | BAS 40-06W H6327-ND | BAS4006WH6327XTSA1TR-ND | 448-BAS4006WH6327XTSA1DKR | BAS4006WH6327XTSA1TR | 448-BAS4006WH6327XTSA1CT | 2156-BAS4006WH6327XTSA1 | SP000749764 | 448-BAS4006WH6327XTSA1TR | IFEINFBAS4006WH6327XTSA1
    Mounting Type
    Surface Mount
    Reverse recovery time
    100ps
    二极管种类
    Schottky
    二极管配置
    1Pair Common Anode
    动作温度范围
    150 C (Max)
    包装(供应商)
    PG-SOT323-3
    电压 - 正向 (Vf) 最大值
    1V@40mA
    电压 - 直流反向 Vr 最大值
    40V
    电流 - 应用 Vr 时的反向泄漏
    1uA@30V
    电流 - 每个二极管的平均整流 Io
    120mA(DC)
    速度
    Small Signal =< 200mA(Io)|Any Speed
    原厂包装
    Tape & Reel
    制造商数量
    3000

    如果产品信息中有错误,请在此处指出。

    产品文档