PSMN102-200Y,115 Nexperia MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Nexperia
- Product name
- PSMN102-200Y,115
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- TrenchMOS(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- SC-100|SOT-669
- Drain to Source voltage
- 200V
- Continuous drain current
- 21.5A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 102mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 30.7nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 1568pF
- Power consumption
- 113W
- Operating temperature range
- -55 to 150C
- Other names
- 1727-5227-6 | 568-6544-2-ND | 568-6544-1-ND | 1727-5227-2 | PSMN102-200Y T/R-ND | 1727-5227-1 | 5202-PSMN102-200Y,115TR | PSMN102200Y115 | 568-6544-6-ND | PSMN102-200Y,115-ND | 568-6544-6 | PSMN102-200Y T/R | 568-6544-2 | 568-6544-1 | 934061323115
- Type
- Power MOSFET
- Manufacturer packaging quantity
- 1500
- Related Products
-
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