BSC190N15NS3GATMA1 Infineon Technologies MOSFET - 商品詳細情報
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BSC190N15NS3GATMA1
BSC190N15NS3GATMA1
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产品概要
Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP T/R
生命周期状态 : Active
ECCN
: EAR99
HTSN : 8541290095
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数据表
设计、模拟用数据
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
其他资料
| Data Sheet | |
|---|---|
| Datasheet | EN_Infineon Technologies_Datasheet_20230223011835611 |
| Environmental and Reliability Data | |
| Constitution Materials List | MCDS_2013-08-29_08-17-21_MA001044860_PG-TDSON-8-1.pdf |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Package Information | |
| Package Dimensions | PG-TDSON-8-1 | BSC190N15NS3GATMA1 |
| Technical Data | |
| Application Note | EN_Infineon Technologies_Application Note_20201013180021428 |
| Selection/Solution Guide | EN_Infineon Technologies_Selection/Solution Guide_20201013185020204 |
规格
- 制造商名称
- Infineon Technologies
- 制品名
- BSC190N15NS3GATMA1
- 制品分类
- MOSFET
- 生命周期状态
- Active
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Package
- TDSON EP
- Drain to Source voltage
- 150V
- Continuous drain current
- 50A
- Drain to Source on-state resistance
- 19mOhm
- Other names
- BSC190N15NS3GATMA1TR | BSC190N15NS3G | BSC190N15NS3 GCT | BSC190N15NS3GATMA1DKR | BSC190N15NS3GATMA1DKR-NDTR-ND | SP000416636 | BSC190N15NS3 G-ND | BSC190N15NS3 GDKR | BSC190N15NS3 G | BSC190N15NS3GATMA1CT | BSC190N15NS3 GDKR-ND | BSC190N15NS3 GCT-ND | BSC190N15NS3 GTR | BSC190N15NS3 GTR-ND | BSC190N15NS3GATMA1CT-NDTR-ND
- Type
- Power MOSFET
- 原厂包装
- Tape & Reel
- 制造商数量
- 5000
如果产品信息中有错误,请在此处指出。

