2017年01月12日

 

东京-- 东芝公司（TOKYO：6502）旗下存储与电子元器件解决方案公司今日宣布推出第二代650V碳化硅（SiC）肖特基势垒二极管（SBD），该二极管将该公司现有产品所提供的正向浪涌电流（IFSM）提高了约70%。新系列八款碳化硅肖特基势垒二极管出货即日启动。

这些新的碳化硅肖特基势垒二极管采用东芝的第二代碳化硅工艺制造，与第一代产品相比，正向浪涌电流提高了约70%，同时开关损耗指标“RON * Qc” [1]降低了大约30%，这使它们适合应用于高效功率因数校正（PFC）方案中。

这些新产品提供4A、6A、8A和10A 4种额定电流，支持非绝缘型“TO-220-2L”封装或绝缘型“TO-220F-2L”封装。这些产品有助于提高4K大屏幕液晶电视、投影机和多功能复印机等装置以及通信基站和电脑服务器等工业设备的电源效率。

新碳化硅肖特基势垒二极管的产品阵容及主要规格：

注
[1] RON：阴阳极导通电阻，Qc：总电容电荷

欲了解更多关于东芝碳化硅肖特基势垒二极管，请访问：
https://toshiba.semicon-storage.com/ap-en/product/diode/sic.html?mm=cp170117&no=03

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞
http://toshiba.semicon-storage.com/cn/?mm=cp170117&no=04

 

 

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http://toshiba.semicon-storage.com/cn/?mm=cp170117&no=04

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