c2m 1700V MOSFET Wolfspeed

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产品信息	生命周期状态	ECCN	Series name	Field-effect transistor type	Technology System	Package	Drain to Source voltage	Continuous drain current	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source on-state resistance	Vgs(th)	Gate Charge (Qg)	Vgs (Max)	Input Capacitance (Ciss)	Power consumption	Operating temperature range
C2M0045170D Wolfspeed MOSFET TRANSMOSFETNCHSIC1.7KV75A3PIN3TABTO247 添加到了物料清单中添加到物料清单现有BOM 新BOM 添加到了收藏夹中	( PCN/PDN Information )	ECCN：EAR99	C2M(TM)	N-CH	SiCFET(Silicon Carbide)	TO-247-3	1700V	72A	20V	70mOhm	4 V	188nC	+25\|-10V	3672pF	520W	-40 to 150C	N	-3312-C2M0045170D
C2M1000170J Wolfspeed MOSFET SIC,MOSFET,1000MOHM,1700V,TO2637,INDUSTRIAL,GEN2 添加到了物料清单中添加到物料清单现有BOM 新BOM 添加到了收藏夹中	( PCN/PDN Information )	ECCN：EAR99	C2M(TM)	N-CH	SiCFET(Silicon Carbide)	D2PAK(7-Lead)	1700V	5.3A	20V	1.4Ohm	3.1 V	13nC	+25\|-10V	200pF	78W	-55 to 150C	N
C2M1000170D Wolfspeed MOSFET TRANSMOSFETNCHSIC1.7KV4.9A3PIN3TABTO247 添加到了物料清单中添加到物料清单现有BOM 新BOM 添加到了收藏夹中	( PCN/PDN Information )	ECCN：EAR99	Z-FET(TM)	N-CH	SiCFET(Silicon Carbide)	TO-247-3	1700V	4.9A	20V	1.1Ohm	2.4 V	13nC	+25\|-10V	191pF	69W	-55 to 150C	Power MOSFET	N
C2M0045170P Wolfspeed MOSFET 添加到了物料清单中添加到物料清单现有BOM 新BOM 添加到了收藏夹中	( PCN/PDN Information )	ECCN：EAR99	C2M(TM)	N-CH	SiCFET(Silicon Carbide)		1700V	72A	20V	59mOhm	4 V	188nC	+25\|-10V	3672pF	520W	-40 to 150C
C2M1000170J-TR Wolfspeed MOSFET 添加到了物料清单中添加到物料清单现有BOM 新BOM 添加到了收藏夹中	( PCN/PDN Information )	ECCN：EAR99	C2M(TM)	N-CH	SiCFET(Silicon Carbide)		1700V	5.3A	20V	1.4Ohm	3.1 V	13nC	+25\|-10V	200pF	78W	-55 to 150C	1697-C2M1000170J-TRDKR \| 1697-C2M1000170J-TR \| 1697-C2M1000170J-TRCT \| C2M1000170J-TR-ND
C2M0080170P Wolfspeed MOSFET ZFET™SICDMOSFET,1700VVDS,RDSON80MOHM4PLUSPACKAGE 添加到了物料清单中添加到物料清单现有BOM 新BOM 添加到了收藏夹中	( PCN/PDN Information )	ECCN：EAR99	C2M(TM)	N-CH	SiCFET(Silicon Carbide)		1700V	40A	20V	125mOhm	4 V	120nC	+25\|-10V	2250pF	277W	-55 to 150C

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"MOSFET"搜索结果

厂商

Series name

Field-effect transistor type

Technology System

Package

Drain to Source voltage

Continuous drain current

Drive Voltage (Max Rds On, Min Rds On)

Drain to Source on-state resistance

Vgs(th)

Gate Charge (Qg)

Vgs (Max)

Input Capacitance (Ciss)

Power consumption

Operating temperature range