Chip One Stop - Shopping Site for Electronic Components and Semiconductors


United States
About Preferential Rank / Discount

Current price of Item(s) have been applied below.

・Preferential Rank and Discount rate will be applied according to your usage of our web service.
・Discount is only applicable to orders from chip1stop web site.
・Discounts may not be applicable to all products and may be subject to MOQ.
・Please contact your representative for details of Preferential Rank.
・No other coupons may be used in conjunction with this discount.

News Center

Toshiba’s 80V N-channel Power MOSFETs Fabricated with Latest Generation Process Help Improve Power Supply Efficiency

2020/04/01Toshiba  Power Supply


- Expanding line-up of U-MOS X-H power MOSFET series -


 March 30, 2020





TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has added 80V N-channel power MOSFETs to its “U-MOS X-H series” fabricated with the latest generation process. The new MOSFETs are suitable for switching power supplies in industrial equipment used in data centers and communication base stations.
The expanded line-up includes "TPH2R408QM," housed in SOP Advance, a surface-mount type packaging, and "TPN19008QM," housed in a TSON Advance package. Shipments starts today.
Drain-source On-resistance in the new 80V U-MOS X-H products, manufactured with the latest generation process, is approximately 40% lower than that of 80V products in the current generation process U-MOS Ⅷ-H series products. The trade-off between the drain-source On-resistance and the gate charge characteristics[1] has also been improved[2] by optimizing device structure. As a result, the new products feature industry’s lowest[3] power dissipation.
Toshiba is expanding its lineup of products that reduce power dissipation to help cut equipment power consumption.

・Switching power supplies (High efficiency AC-DC converters, DC-DC converters, etc.)
・Motor control equipment (Motor drive, etc.)

・The industry’s lowest[3] power dissipation (by improving the trade-off between On-resistance and gate charge characteristic[2])
・Industry’s lowest level[3] On-resistance:
RDS(ON)=2.43mΩ (max) @VGS=10V (TPH2R40QM)
RDS(ON)=19mΩ (max) @VGS=10V (TPN19008QM)
・High channel temperature rating : Tch=175℃

Main Specifications

(Unless otherwise specified, @Ta=25℃)

[1] Total gate charge (gate-source plus gate-drain), gate switch charge, output charge
[2] Compared with TPH4R008NH (U-MOS Ⅷ-H series), TPH2R408QM has improved its drain-source On-resistance x total gate charge by approximately 15%, drain-source On-resistance x gate switch charge by approximately 10%, and drain-source On-resistance x output charge by approximately 31%.
[3] As of March 30, 2020, Toshiba survey.

Follow the links below for more on the new products.


Follow the link below for more on Toshiba 12-300V MOSFET line-up.

* Company names, product names, and service names may be trademarks of their respective companies.

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Toshiba Electronic Devices & Storage Corporation’s Website>



Companies Website:

Toshiba News Release

Related News Release