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IPB80N06S2L-H5  
Infineon Technologies   MOSFET  -  Product Details

IPB80N06S2L-H5

  • C1S322000081934

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  • Other Documents

    • ECCN:EAR99
    • HTSN:8541290095
    • Product Overview :Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
    • Lifecycle Status:Obsolete
    • RoHS
    • PB free
    Field-effect transistor type
    N-CH
    Technology System
    MOSFET(Metal Oxide)
    Package
    PG-TO263-3-2
    Drain to Source voltage
    55V
    Continuous drain current
    80A
    Drive Voltage (Max Rds On, Min Rds On)
    4.5|10V
    Drain to Source on-state resistance
    4.7mOhm
    Vgs(th)
    2 V
    Gate Charge (Qg)
    190nC
    Vgs (Max)
    20V
    Input Capacitance (Ciss)
    5000pF
    Power consumption
    300W
    Operating temperature range
    -55 to 175C
    Series name
    OptiMOS(TM)
    Manufacturer Packaging
    Tape & Reel
    Manufacturer packaging quantity
    1000

    If you find an error in the product information, please let us know here.

    Data Sheet
    Datasheet Infineon-Datasheet-IPP_B80N06S2L_H5
    Environmental and Reliability Data
    Constitution Materials List MCDS_2018-01-22_14-54-26_MA001051318_PG-TO263-3-2
    Package Information
    Package Dimensions PG-TO263-3-2 | IPB80N06S2LH5ATMA4
    Technical Data
    Selection/Solution Guide EN_Infineon Technologies_Selection/Solution Guide_20201013184938564
    Catalog Automotive MOSFETs Product Brochure
    Catalog Automotive MOSFETs Product Brochure