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IPI50R350CP  
Infineon Technologies   MOSFET  -  Product Details

IPI50R350CP

  • C1S322000083701


  • Added to bookmarks.
    • ECCN:EAR99
    • Product Overview :Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-262
    • Lifecycle Status:NRND
    Field-effect transistor type
    N-CH
    Technology System
    MOSFET(Metal Oxide)
    Package
    PG-TO262-3
    Drain to Source voltage
    550V
    Continuous drain current
    10A
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Drain to Source on-state resistance
    350mOhm
    Vgs(th)
    3.5 V
    Gate Charge (Qg)
    25nC
    Vgs (Max)
    20V
    Input Capacitance (Ciss)
    1020pF
    Power consumption
    89W
    Operating temperature range
    -55 to 150C
    Series name
    CoolMOS(TM)
    Manufacturer Packaging
    Tube
    Manufacturer packaging quantity
    500

    If you find an error in the product information, please let us know here.

    Data Sheet
    Datasheet Infineon-Datasheet-IPI50R350CP
    Environmental and Reliability Data
    Constitution Materials List MCDS_2017-09-27_16-15-39_MA001135252_PG-TO262-3-22
    Package Information
    Package Dimensions PG-TO262-3-1 | IPI50R350CPXKSA1
    Technical Data
    Selection/Solution Guide EN_Infineon Technologies_Selection/Solution Guide_20201013184540981
    Catalog CoolMOS™ Benefits in Hard and Soft Switching
    Catalog CoolMOS™ Benefits in Hard and Soft Switching