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IPD60R380C6  
Infineon Technologies   MOSFET  -  Product Details

IPD60R380C6

  • C1S322000108365


  • Added to bookmarks.
    • ECCN:EAR99
    • HTSN:8541290095
    • Product Overview :Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R
    • Lifecycle Status:Active
    • PCN information
    • RoHS
    • PB free
    Field-effect transistor type
    N-CH
    Technology System
    MOSFET(Metal Oxide)
    Package
    PG-TO252-3
    Drain to Source voltage
    600V
    Continuous drain current
    10.6A
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Drain to Source on-state resistance
    380mOhm
    Vgs(th)
    3.5 V
    Gate Charge (Qg)
    32nC
    Vgs (Max)
    20V
    Input Capacitance (Ciss)
    700pF
    Power consumption
    83W
    Operating temperature range
    -55 to 150C
    Remarks
    CoolMOS™
    Series name
    CoolMOS(TM)
    Manufacturer Packaging
    Tape & Reel
    Manufacturer packaging quantity
    2500

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