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IPB60R120P7ATMA1  
Infineon Technologies   MOSFET  -  Product Details

IPB60R120P7ATMA1

  • C1S322000794214

Images are for reference only

  • Added to bookmarks.
    • ECCN:EAR99
    • HTSN:8542390001
    • Lifecycle Status:Active
    Field-effect transistor type
    N-CH
    Technology System
    MOSFET(Metal Oxide)
    Package
    TO-263-3|D2Pak|TO-263AB
    Drain to Source voltage
    650V
    Continuous drain current
    26A
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Drain to Source on-state resistance
    120mOhm
    Vgs(th)
    4 V
    Gate Charge (Qg)
    36nC
    Vgs (Max)
    20V
    Input Capacitance (Ciss)
    1544pF
    Power consumption
    95W
    Operating temperature range
    -55 to 150C
    Series name
    CoolMOS(TM) P7

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