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TK8P60W,RVQ(S  
Toshiba   MOSFET  -  Product Details

TK8P60W,RVQ(S

  • C1S751201141891


  • Added to bookmarks.
  • Other Documents

    • ECCN:EAR99
    • HTSN:8541290080
    • Product Overview :Trans MOSFET N-CH Si 600V 8A 3-Pin(2+Tab) DPAK
    • Lifecycle Status:Active
    • RoHS
    • PB free
    Field-effect transistor type
    N-CH
    Package
    DPAK
    Drain to Source voltage
    600V
    Continuous drain current
    8A
    Drain to Source on-state resistance
    500mOhm
    Remarks
    世代:DTMOSIV / ゲート入力電荷量:18.5nC(typ.) / 入力容量:570pF(typ.)
    Product name
    小信号MOS FET 1素子
    Manufacturer Packaging
    Tape & Reel
    Manufacturer packaging quantity
    2000

    If you find an error in the product information, please let us know here.

    Data Sheet
    Datasheet EN_Toshiba_データシート_20150414164103627
    Datasheet EN_Toshiba_Datasheet_20180216154317819
    Design and Simulation Data
    Symbol/Footprint/3D Model Download from Ultra Librarian