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2N7000-G  
Microchip Technology   MOSFET  -  Product Details

2N7000-G

  • C1S505200898463


  • Added to bookmarks.
    • ECCN:EAR99
    • HTSN:8542390001
    • Product Overview :MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, 5 Ohm
    • Lifecycle Status:Active
    Field-effect transistor type
    N-CH
    Technology System
    MOSFET(Metal Oxide)
    Package
    TO-226-3|TO-92-3(TO-226AA)
    Drain to Source voltage
    60V
    Continuous drain current
    200mA
    Drive Voltage (Max Rds On, Min Rds On)
    4.5|10V
    Drain to Source on-state resistance
    5Ohm
    Vgs(th)
    3 V
    Vgs (Max)
    30V
    Input Capacitance (Ciss)
    60pF
    Power consumption
    1W
    Operating temperature range
    -55 to 150C
    Manufacturer Packaging
    Bag
    Manufacturer packaging quantity
    1000

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