2N7002P,215 Nexperia MOSFET - 商品詳細情報
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Data sheet
Design/Simulation Data
Other Documents
| Data Sheet | |
|---|---|
| Datasheet | EN_Nexperia B.V._Datasheet_20150106104534474 |
Specifications
- Manufacturer name
- Nexperia
- Product name
- 2N7002P,215
- Product classification
- MOSFET
- Lifecycle Status
- NRND
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-236-3|SC-59|SOT-23-3
- Drain to Source voltage
- 60V
- Continuous drain current
- 360mA
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 1.6Ohm
- Vgs(th)
- 2.4 V
- Gate Charge (Qg)
- 0.8nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 50pF
- Power consumption
- 350mW
- Operating temperature range
- -55 to 150C
- Other names
- 568-5818-6-ND 1727-4692-2 1727-4692-1 568-5818-6 5202-2N7002P,215TR 1727-4692-6 2N7002P215 568-5818-2-ND 568-5818-1-ND 2N7002P,215-ND 568-5818-2 934064132215 568-5818-1
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
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