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IPD088N06N3GBTMA1  
Infineon Technologies   MOSFET  -  Product Details

IPD088N06N3GBTMA1

  • C1S322000194414


  • Added to bookmarks.
  • Other Documents

    • ECCN:EAR99
    • HTSN:8541290095
    • Product Overview :Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK
    • Lifecycle Status:NRND
    • RoHS
    • PB free
    Field-effect transistor type
    N-CH
    Package
    TO-252
    Drain to Source voltage
    60V
    Continuous drain current
    50A
    Drain to Source on-state resistance
    8.8mOhm
    Manufacturer Packaging
    Tape & Reel
    Manufacturer packaging quantity
    2500

    If you find an error in the product information, please let us know here.

    Data Sheet
    Datasheet Infineon-Datasheet-IPD088N06N3
    Datasheet EN_Infineon Technologies_Datasheet_20201013165407779
    Environmental and Reliability Data
    Constitution Materials List MCDS_2017-09-25_22-07-42_MA000473316_PG-TO252-3-311
    Package Information
    Package Dimensions PG-TO252-3-311 | IPD088N06N3GBTMA1
    Technical Data
    Application Note EN_Infineon Technologies_Application Note_20201013180024668
    Selection/Solution Guide EN_Infineon Technologies_Selection/Solution Guide_20201013185023934