IRF540NPBF Infineon Technologies MOSFET - 商品詳細情報
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Data sheet
Design/Simulation Data
Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Other Documents
Data Sheet | |
---|---|
Datasheet | EN_Infineon Technologies_Datasheet_20230223012221038 |
Design and Simulation Data | |
Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Technical Data | |
Application Note | EN_Infineon Technologies_Application Note_20201013175904718 |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IRF540NPBF
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- HEXFET(R)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-220-3
- Drain to Source voltage
- 100V
- Continuous drain current
- 33A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 44mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 71nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 1960pF
- Power consumption
- 130W
- Operating temperature range
- -55 to 175C
- Other names
- 64-0092PBF-ND | 64-0092PBF | *IRF540NPBF | SP001561906 | 2156-IRF540NPBF
- Type
- Power MOSFET
- Manufacturer Packaging
- Tube
- Manufacturer packaging quantity
- 1000
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