IRF540NPBF Infineon Technologies | Discrete / Transistors

IRF540NPBF
Infineon Technologies MOSFET - Product Details

IRF540NPBF

C1S322000092019

Documents

Data Sheet
Datasheet	Infineon-Datasheet-IRF540NPBF
Datasheet	EN_Infineon Technologies_Datasheet_20201013165216416

Technical Data

Documents

Technical Data
Application Note	EN_Infineon Technologies_Application Note_20201013175904718

Other Documents

ECCN：EAR99
HTSN：8541290095

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Product Overview :Trans MOSFET N-CH Si 100V 33A 3-Pin(3+Tab) TO-220AB Tube
Lifecycle Status:Active

Field-effect transistor type: N-CH

Technology System: MOSFET(Metal Oxide)

Package: TO-220-3

Drain to Source voltage: 100V

Continuous drain current: 33A

Drive Voltage (Max Rds On, Min Rds On): 10V

Drain to Source on-state resistance: 44mOhm

Vgs(th): 4 V

Gate Charge (Qg): 71nC

Vgs (Max): 20V

Input Capacitance (Ciss): 1960pF

Power consumption: 130W

Operating temperature range: -55 to 175C

Series name: HEXFET(R)

Manufacturer Packaging: Tube

Manufacturer packaging quantity: 1200

If you find an error in the product information, please let us know here.

Data Sheet
Datasheet	Infineon-Datasheet-IRF540NPBF
Datasheet	EN_Infineon Technologies_Datasheet_20201013165216416
Technical Data
Application Note	EN_Infineon Technologies_Application Note_20201013175904718

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Infineon Technologies MOSFET - Product Details

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IRF540NPBF Infineon Technologies MOSFET - Product Details

IRF540NPBF

IRF540NPBF
Infineon Technologies MOSFET - Product Details