BSC010NE2LSIATMA1 Infineon Technologies MOSFET - 商品詳細情報

BSC010NE2LSIATMA1

Infineon Technologies

MOSFET

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BSC010NE2LSIATMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

Produktübersicht

Trans MOSFET N-CH 25V 38A 8-Pin TDSON EP T/R

Lifecycle Status : NRND

ECCN : EAR99

HTSN : 8541290095

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Produktübersicht

Trans MOSFET N-CH 25V 38A 8-Pin TDSON EP T/R

Lifecycle Status : NRND

ECCN : EAR99

HTSN : 8541290095

Product Information

Datenblatt
3D CAD情報
- SamacSys
Footprint/Symbol/3D CAD Information
PCN/PDN(EOL)

Specifications

Herstellername: Infineon Technologies

Produktname: BSC010NE2LSIATMA1

Produkt Klassifikation: MOSFET

Lifecycle Status: NRND

RoHS: RoHS

Series name: OptiMOS(TM)

Field-effect transistor type: N-CH

Package: PG-TDSON-8

Drain to Source voltage: 25V

Continuous drain current: 38A/100A

Drain to Source on-state resistance: 1.05mOhm

Other names: BSC010NE2LSIATMA1DKR | BSC010NE2LSIDKR | BSC010NE2LSIATMA1TR | BSC010NE2LSICT-ND | BSC010NE2LSI | BSC010NE2LSIATMA1CT | BSC010NE2LSIDKR-ND | BSC010NE2LSITR-ND | BSC010NE2LSI-ND | SP000854376 | BSC010NE2LSICT

Type: Power MOSFET

Herstellerverpackung: Tape & Reel

Hersteller Verpackungsmenge: 5000

Wenn die Produktinformationen fehlerhaft sind, weisen Sie hier darauf hin.

Documents

Datenblatt
Datasheet(English)	EN_Infineon Technologies_Datasheet_20230223011843068
Environmental and Reliability Data
Constitution Materials List(English)	MCDS_2013-08-29_14-05-20_MA001021472_PG-TDSON-8-7.pdf
Technical Data
Application Note(English)	EN_Infineon Technologies_Application Note_20201013175825465
Selection/Solution Guide(English)	EN_Infineon Technologies_Selection/Solution Guide_20201013184802148

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