CSD18536KTTT Texas Instruments MOSFET - 商品詳細情報
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CSD18536KTTT
CSD18536KTTT
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Lifecycle Status : Active
ECCN
: EAR99
HTSN : 8541290095
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Data sheet
Design/Simulation Data
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Other Documents
| Design and Simulation Data | |
|---|---|
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Texas Instruments
- Product name
- CSD18536KTTT
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- NexFET(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-263-4|D2Pak|TO-263AA
- Drain to Source voltage
- 60V
- Continuous drain current
- 200A/349A
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5|10V
- Drain to Source on-state resistance
- 1.6mOhm
- Vgs(th)
- 2.2 V
- Gate Charge (Qg)
- 140nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 11430pF
- Power consumption
- 375W
- Operating temperature range
- -55 to 175C
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