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R6003KND3TL1

Rohm

MOSFET

Images are for reference only

  • Lifecycle Status:Active

Specifications

Field-effect transistor type
N-CH
Technology System
MOSFET(Metal Oxide)
Drain to Source voltage
600V
Continuous drain current
3A
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source on-state resistance
1.5Ohm
Vgs(th)
5.5 V
Gate Charge (Qg)
8nC
Vgs (Max)
20V
Input Capacitance (Ciss)
185pF
Power consumption
44W
Operating temperature range
150C
Manufacturer Packaging
Tape & Reel
Manufacturer packaging quantity
2500

If you find an error in the product information, please let us know here.

Documents

Data Sheet
Datasheet EN_Rohm_Datasheet_20210617200004262
Environmental and Reliability Data
Other Environmental and Reliability Data Moisture Sensitivity Level
Design and Simulation Data
Symbol/Footprint/3D Model Download from Ultra Librarian

Stock information of "R6003KND3TL1"

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