IGLD60R190D1AUMA1 Infineon Technologies MOSFET - 商品詳細情報
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IGLD60R190D1AUMA1
IGLD60R190D1AUMA1
HTSN : 8541290095
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| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Design and Simulation Data | |
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Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IGLD60R190D1AUMA1
- Product classification
- MOSFET
- Lifecycle Status
- Obsolete
- Series name
- CoolGaN(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Drain to Source voltage
- 600V
- Continuous drain current
- 10A
- Vgs(th)
- 1.6 V
- Vgs (Max)
- -10V
- Input Capacitance (Ciss)
- 157pF
- Power consumption
- 62.5W
- Operating temperature range
- -55 to 150C
If you find an error in the product information, please let us know here.
Documents
发货预定日 : Feb-04-26
-
C1S Part Number
:C1S322000815410
最终发货地
:JP
库存数 : 1,306
- In Stock (EU)
- 行货
- MOQ/SPQ : 1/1
- Minimum: 1 Multiples: 1
-
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| 数量 | 单价(USD) |
|---|---|
| 1+ | US$15.9 |
| 5+ | US$14.4 |
| 10+ | US$11.7 |
| 50+ | US$11.3 |
| 100+ | US$8.57 |
| 250+ | US$8.35 |
- 单价
- US$15.9
- 产品小計金額
- US$15.90
- 其他费用
- US$0
- 购买金额总计(USD)
- US$15.90
-
Product name : IGLD60R190D1AUMA1
Manufacturers : Infineon Technologies
Quantity : 1
Subtotal : US$15.90
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Product name : IGLD60R190D1AUMA1
Manufacturers : Infineon Technologies
Quantity : 1
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