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PCN/PDN/NRND Information

PCN (product/process change notification) and PDN (production discontinuation notification) information.

Notification Date Notification Documents Notification Type Notification Information
2021/02/15 PCN(Product Change Notice) Changes in the Datasheets of 650 V 15 m? (C3M) and 60 m? (C3M) SiC MOSFET Discrete Devices
Product Package Previous Datasheet Revision New Datasheet revision
C3M0015065D TO-247-3 Rev. 4 > 12-2020 Rev. 5, 02-2021
C3M0015065K TO-247-4 Rev. 3 > 10-2020 Rev. 4, 02-2021
C3M0060065D TO-247-3 Rev. 3 > 07-2020 Rev. 4, 02-2021
2021/03/01 PCN(Product Change Notice) Cree’s C3M 650V SiC MOSFETs are currently manufactured on 150-mm diameter wafers
at Cree’s fabrication facility in Research Triangle Park (RTP), North Carolina, USA.
The production line is now being expanded to utilize Cree’s capacity at its fabrication facility
in Durham (DUR), North Carolina, USA. Note that all tools of both facilities are nth-of-a-kind
(NOAK) tools, namely, same tool set, same process, same process controls, same chart setup,
same automation, same interface, etc.
2021/05/31 PCN(Product Change Notice) Package Enhancement to Store SMT MOSFETs and Schottky Diodes :
Packed in Tube inside Vacuum-Sealed Moisture Barrier Bags (MBBs) for Climate Protection
surface-mount TO-252 and TO-263 type components in tube
2022/02/15 PCN(Product Change Notice) Changes in the Datasheets of Gen3 650 V 15 mΩ (C3M) SiC MOSFET Discrete Devices
C3M0015065D Rev.5 >> Rev.6
C3M0015065K Rev.4 >> Rev.5
Effective Date: 02/15/2022
2022/07/01 PCN(Product Change Notice) Manufacturing of Discrete MOSFETs on 200-mm Wafers at the Mohawk Valley Fabrication (MVF) Facility

Description of the Change
Wolfspeed’s discrete silicon carbide (SiC) MOSFETs are currently manufactured on 150-mm wafers
at Wolfspeed’s fabrication facilities in RTP and Durham, North Carolina, USA.
To increase its production capacity, Wolfspeed will utilize its state-of-the art 200-mm wafer
Mohawk Valley Fabrication (MVF) facility in New York.

Volume Production Date Beginning July 2022
2023/07/10 PCN(Product Change Notice) Wolfspeed needs to change the LotId and SlotNumber reported in E142 wafer maps due to integration issues
with the recent implementation of SEMI Specification M12-0706 in the wafer ID format for its bare die products
Projected First Ship Date July 10, 2023
2023/10/23 PCN(Product Change Notice) Wolfspeed 200mm MVF to be added as a second source wafer fab to 150mm Durham fab.
Material can be staged for immediate use at issuance and signature of PCN once product is qualified.
2023/10/24 PCN(Product Change Notice) Change in Discrete Products from Cree Logo to Wolfspeed Logo
Projected First Ship Date for Products with the Wolfspeed Logo 10/23/2023
2024/03/25 PCN(Product Change Notice) Wolfspeed’s discrete silicon carbide (SiC) MOSFETs are currently manufactured on 150-mm wafers
at Wolfspeed’s fabrication facilities in RTP and Durham, North Carolina, USA.
To increase its production capacity,
Wolfspeed will add its state-of-the art 200-mm wafer Mohawk Valley Fabrication (MVF) facility in New York.
2024/04/25 PCN(Product Change Notice) Supplier Notice No.:PCN-00114
Title:
Updated Datasheets of SiC Discrete Power MOSFET

Description of the Change:
Wolfspeed is making a change in the datasheets of the SiC discrete Power MOSFET products. RDS(ON) specification will be reported as a typical value only to bring the datasheet documentation of the affected products in alignment with the rest of the C3M 1200 V portfolio.

Anticipated Impact:
No change is expected to the fit, form, or function of the devices.
Wolfspeed urges its customers to utilize the updated datasheets.
2024/05/21 PCN(Product Change Notice) Supplier Notice No.:PCN-00106
Title:
Manufacturing of Discrete MOSFETs (C3M) on 200-mm Wafers at the Mohawk Valley Fabrication (MVF) Facility

Description of the Change:
Wolfspeed’s discrete silicon carbide (SiC) MOSFETs are currently manufactured on 150-mm wafers at Wolfspeed’s fabrication facilities in RTP and Durham, North Carolina, USA. To increase its production capacity, Wolfspeed will add its state-of-the art 200-mm wafer Mohawk Valley Fabrication (MVF) facility in New York and customers may receive material from either facility after acceptance of the PCN or after PCN expiration.

Anticipated Impact:
Qualification and characterization activities have been performed to ensure the products based on 150-mm and 200-mm wafers.

Projected First Ship Date:
Upon PCN acceptance or 3 Months post PCN delivery
2025/06/11 PCN(Product Change Notice) PCN No.:PCN-00188 Rev 2
Change Desc.:Labelling Change on Shipping Boxes to Remove MVF related “-M” Suffix from Wolfspeed Part Number.

Wolfspeed’s Discrete silicon carbide (SiC) MOSFETs are currently manufactured on 150-mm and 200-mm
diameter wafers at Wolfspeed’s fabrication facilities in Durham, North Carolina, USA and in Marcy, New York,
USA, respectively. During the initial ramp and qualification period of the 200-mm wafer Mohawk Valley
Fabrication (MVF) facility in New York, Wolfspeed added a “-M” suffix to the end of the Wolfspeed part number
on the shipping label. This suffix was intended to be temporary until after customer acceptance. With this
change, the “-M” suffix will be removed from the shipping box label and the Wolfspeed part number will revert
back to Wolfspeed orderable part number.
2025/06/24 PCN(Product Change Notice) PCN No.:PCN-00188 Rev 3
Change Desc.:Labelling Change on Shipping Boxes to Remove MVF related “-M” Suffix from Wolfspeed Part Number

Revision Historty:
Revision3 Date:June 24, 2025
C3M0021120U, C3M0032120D and C3M0350120D added
2025/06/30 PCN(Product Change Notice) PCN No.:PCN-00188 Rev 4
Change Desc.:Labelling Change on Shipping Boxes to Remove MVF related “-M” Suffix from Wolfspeed Part Number (Rev.4)
2025/08/04 PCN(Product Change Notice) PCN No.:PCN-00188 Rev 6
Change Desc.:Labelling Change on Shipping Boxes to Remove MVF related “-M” Suffix from Wolfspeed Part Number
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PCN/PDN/NRND Information
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