TK15A60D(STA4,Q,M) Toshiba MOSFET - 商品詳細情報
Data sheet
| Datasheet | EN_Toshiba_データシート_20150128113824181 |
| Datasheet | EN_Toshiba_Datasheet_20180216154725884 |
Design/Simulation Data
Other Documents
| Data Sheet | |
|---|---|
| Datasheet | EN_Toshiba_データシート_20150128113824181 |
| Datasheet | EN_Toshiba_Datasheet_20180216154725884 |
Specifications
- Manufacturer name
- Toshiba
- Product name
- TK15A60D(STA4,Q,M)
- Product classification
- MOSFET
- Lifecycle Status
- Obsolete
- RoHS
- RoHS
- Series name
- π-MOSVII
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-220-3
- Drain to Source voltage
- 600V
- Continuous drain current
- 15A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 370mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 45nC
- Vgs (Max)
- 30V
- Input Capacitance (Ciss)
- 2600pF
- Power consumption
- 50W
- Operating temperature range
- 150C
- Other names
- TK15A60D
- Remarks
- 世代：π-MOSVII / ゲート入力電荷量：45nC(typ.) / 入力容量：2600pF(typ.)
- Product name
- 小信号MOS FET 1素子
- Type
- Power MOSFET
- Manufacturer Packaging
- Bulk
- Manufacturer packaging quantity
- 50
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