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TK10P60W,RVQ(S  Toshiba  MOSFET  -  商品詳細情報

TK10P60W,RVQ(S

Toshiba

MOSFET

TK10P60W,RVQ(S Toshiba

The images are for reference only. For the precise specifications, refer to the product specifications.

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  • TK10P60W,RVQ(S

    TK10P60W,RVQ(S

    Toshiba

    MOSFET

    Toshiba

    MOSFET

    Added to bookmarks.
  • Product Overview

    Trans MOSFET N-CH Si 600V 9.7A 3-Pin(2+Tab) DPAK

    Lifecycle Status : Active
    ECCN EAR99

    HTSN 8541290080

    Product Overview

    Trans MOSFET N-CH Si 600V 9.7A 3-Pin(2+Tab) DPAK

    Lifecycle Status : Active
    ECCN EAR99

    HTSN 8541290080

    Product Information

    • Footprint/Symbol/3D CAD Information
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    Design/Simulation Data

    Specifications

    Manufacturer name
    Toshiba
    Product name
    TK10P60W,RVQ(S
    Product classification
    MOSFET
    Lifecycle Status
    Active
    RoHS
    RoHS
    Field-effect transistor type
    N-CH
    Package
    DPAK
    Drain to Source voltage
    600V
    Continuous drain current
    9.7A
    Drain to Source on-state resistance
    430mOhm
    Other names
    TK10P60W
    Remarks
    世代:DTMOSIV / ゲート入力電荷量:20nC(typ.) / 入力容量:700pF(typ.)
    Product name
    小信号MOS FET 1素子
    Manufacturer Packaging
    Tape & Reel
    Manufacturer packaging quantity
    2000

    If you find an error in the product information, please let us know here.

    Details