TK10P60W,RVQ(S Toshiba MOSFET - 商品詳細情報
Search Alternative Products
Data sheet
Datasheet | EN_Toshiba_データシート_20150414103847990 |
Datasheet | EN_Toshiba_Datasheet_20180216145830617 |
Design/Simulation Data
Other Documents
Data Sheet | |
---|---|
Datasheet | EN_Toshiba_データシート_20150414103847990 |
Datasheet | EN_Toshiba_Datasheet_20180216145830617 |
Specifications
- Manufacturer name
- Toshiba
- Product name
- TK10P60W,RVQ(S
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Package
- DPAK
- Drain to Source voltage
- 600V
- Continuous drain current
- 9.7A
- Drain to Source on-state resistance
- 430mOhm
- Other names
- TK10P60W
- Remarks
- 世代:DTMOSIV / ゲート入力電荷量:20nC(typ.) / 入力容量:700pF(typ.)
- Product name
- 小信号MOS FET 1素子
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 2000
If you find an error in the product information, please let us know here.