Manufacturer name

Infineon Technologies

Product name

BSZ900N20NS3GATMA1

Product classification

MOSFET

Lifecycle Status

Active

RoHS

RoHS

Series name

OptiMOS(TM)

Field-effect transistor type

N-CH

Technology System

MOSFET(Metal Oxide)

Package

8-PowerTDFN

Drain to Source voltage

200V

Continuous drain current

15.2A

Drive Voltage (Max Rds On, Min Rds On)

10V

Drain to Source on-state resistance

90mOhm

Vgs(th)

4 V

Gate Charge (Qg)

11.6nC

Vgs (Max)

20V

Input Capacitance (Ciss)

920pF

Power consumption

62.5W

Operating temperature range

-55 to 150C

Other names

BSZ900N20NS3GTR-ND | BSZ900N20NS3GATMA1CT | BSZ900N20NS3GCT | BSZ900N20NS3G | BSZ900N20NS3 G | 2156-BSZ900N20NS3GATMA1 | BSZ900N20NS3GTR | BSZ900N20NS3GDKR-ND | BSZ900N20NS3GATMA1DKR | BSZ900N20NS3GDKR | BSZ900N20NS3GATMA1TR | SP000781806 | BSZ900N20NS3GCT-ND | INFINFBSZ900N20NS3GATMA1

Manufacturer Packaging

Tape & Reel

Manufacturer packaging quantity

5000

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