IRF640 STMicroelectronics MOSFET - 商品詳細情報
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Data sheet
Design/Simulation Data
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Other Documents
| Design and Simulation Data | |
|---|---|
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- STMicroelectronics
- Product name
- IRF640
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- MESH OVERLAY(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-220-3
- Drain to Source voltage
- 200V
- Continuous drain current
- 18A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 180mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 72nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 1560pF
- Power consumption
- 125W
- Operating temperature range
- 150C
- Type
- Power MOSFET
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Documents
