1SS362FV,L3F(T Toshiba Switching Diode - 商品詳細情報
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1SS362FV,L3F(T
1SS362FV,L3F(T
Diode Silicon Epitaxial Planar Type
HTSN : 8541100080
Search Alternative Products
Diode Silicon Epitaxial Planar Type
HTSN : 8541100080
| Datasheet | EN_Toshiba_Datasheet_20150423115946320 |
| Datasheet | EN_Toshiba_Datasheet_20180216154602529 |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | EN_Toshiba_Datasheet_20150423115946320 |
| Datasheet | EN_Toshiba_Datasheet_20180216154602529 |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Toshiba
- Product name
- 1SS362FV,L3F(T
- Product classification
- Switching Diode
- Lifecycle Status
- Active
- RoHS
- RoHS
- Package
- SOT-723
- Other names
- 1SS362FV
- Current - Average Rectified Io per Diode
- 100mA
- Current - Reverse Leakage with Vr Applied
- 500nA@80V
- Diode Configuration
- 1Series Connection
- Diode type
- Standard
- Mounting Type
- Surface Mount
- Operating temperature range
- 150 C (Max)
- Package (Supplier)
- VESM
- Reverse recovery time
- 4ns
- Spannung – DC Reverse Vr Max
- 80V
- Spannung – Vorwärts (Vf) Max
- 1.2V@100mA
- Speed
- Small Signal =< 200mA(Io)|Any Speed
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 8000
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