TK30E06N1,S1X(S Toshiba MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Toshiba
- Product name
- TK30E06N1,S1X(S
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- U-MOSVIII-H
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-220
- Drain to Source voltage
- 60V
- Continuous drain current
- 43A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 15mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 16nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 1050pF
- Power consumption
- 53W
- Operating temperature range
- 150C
- Other names
- TK30E06N1, 2SK2886(F)
- Remarks
- 世代：U-MOSVIII-H / ゲート入力電荷量：16nC(typ.)
- Product name
- 小信号MOS FET 1素子
- Manufacturer Packaging
- Bulk
- Manufacturer packaging quantity
- 50
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