38. Types of diodes

Summarized the typical type of diode and its feature.

Type of diode Feature

PN Junction diode

It is the p type semiconductor and n type semiconductor joined diode. Silicon and the germanium are used as the material. It is designed to flow large current when use for the rectification. Moreover, in case of small signal used, it is designed for fast switching while current is relatively small.

1SSxxx
(For general use)

1SRxxx
(For rectification)

Schottky barrier diode

It is a diode using the Schottky barrier generated when the metal comes in contact with the semiconductor. High-speed switching is possible because the rise voltage is low, and the other terminal is metal.

pin diode

It is diode that serve the purpose of reducing the electrostatic capacity, having the structure of the intrinsic semiconductor placed between p type semiconductor and n type semiconductor. Possible a high-speed switching.

1SVxxx

Esaki diode
(Tunnel diode)

The Esaki diode has the area of negative resistance that used the tunnel effect. It is widely used for the source of the micro wave.

1SExxx

Gunn diode

Gunn diode has the area of negative resistance that attached electrode to n type GaAs (gallium arsenide) crystal. It is widely used for the source of the micro wave.

1SGxxx

(Impact avalanche and transit time diode) IMPATT diode
(Impact avalanche and transit time diode)

It is a diode with the area of negative resistance that use the avalanche breakdown (avalanche breakdown) generated when the reverse voltage is applied on the pn junction. It is widely used for the source of the micro wave.

1STxxx

Variable-capacitance diode
(Varicap)

It is the diode that changes the electrostatic capacity between terminals when the reverse voltage is applied on the pn junction. The capacity is changing by the expansion of the depleted layer. It is widely used for the electronic tuning circuit such as in the radio.

1SVxxx

Zener diode
(Voltage-regulator diode)

It is diode that generates the constant voltage using the avalanche breakdown (avalanche breakdown) generated when applied the reverse voltage on the pn junction.

1SZxxx