MOSFET lineup

Si low voltage power (12-300V)

OptiMOS™ and StrongIRFET™ low and medium voltage power MOSFETs

  • StrongIRFET™ and IRFET™
    switching frequency < 100kHz


    • Providing low R DS(on) and high current capability
    • For low frequency switching applications
    • Battery-powered circuits and brush / brushless DC motor drives, etc.
  • OptiMOS™
    Wide band


    • Providing low R DS(on) and high current capability
    • For high frequency switching applications
    • Industrial power supply / DC-AC inverters, etc.
  • P-channel power MOSFET


    • Optimizing performance and simplifying circuits
    • Battery protection, reverse polarity protection, etc.
    • Package: D2PAK, DPAK, DirectFET, etc.

Si high voltage power (500-950V)

The groundbreaking CoolMOS™ Super Junction MOSFET sets a new standard in energy efficiency.

  • CoolMOS™ (< 400W) Super Junction MOSFET
    for Consumer Applications

  • Industrial/Automotive CoolMOS™ (>250W)
    Super Junction MOSFET

CoolMOS™ SJ MOSFET supports low power SMPS applications such as smartphone / tablet chargers, notebook PC adapters, LED lighting, audio and TV power supplies.
For servers, telecom, PC power supplies, solar power, UPS, and industrial applications, Infineon’s latest CoolMOS™ 7 SJ MOSFET series C7, G7, CFD7, PFD7, S7 and P7 product families have the features you need. Choose CoolMOS™ for highest efficiency and highest cost performance.


Infineon’s CoolSiC™ semiconductor solutions are the next critical step towards an energy smart world.

SiC MOSFET and Si IGBT benchmark

Silicon carbide (SiC) has a wide band gap of 3 eV (eV) and a much higher thermal conductivity when compared to silicon. SiC-based MOSFETs are ideal for high withstand voltage, high power applications operating at high frequencies. Device parameters such as RDS(ON) change less with temperature when compared to silicon, making it possible to design with a small design margin and improve performance. With a proven, high-quality mass production system, Infineon’s CoolSiC™ solutions combine innovative technology with benchmark reliability.


CoolGaN™: a new power paradigm

GaN has significantly higher electron mobility with a much higher bandgap (3.4 eV) than SiC.
The breakdown electric field strength is 10 times that of silicon (Si), and twice the electron mobility.
The output charge and gate charge important in high frequency operation are 1/10 that of Si, and the reverse recovery charge is almost zero. GaN is the technology of choice for modern resonant topologies that enable new approaches such as new topologies and current modulation.
Infineon’s GaN solutions are based on the enhancement mode (e-mode) concept, the most robust and high-performance concept on the market for fast turn-on and turn-off. CoolGaN™ Gallium Nitride products focus on high performance and robustness, providing significant added value to a wide range of systems for a variety of applications including servers, telecom, wireless charging, adapters, chargers and audio.
CoolGaN™ switches are also easy to use and simple to design with Infineon’s dedicated GaN EiceDRIVER™ gate driver ICs.

Click here to see the Infineon GaN power semiconductor feature page

20V-800V Automotive MOSFET

Automotive MOSFET products boast excellent performance based on the most advanced MOSFET technology, high quality and robust package.

  • Industry leading R DS(on) performance with trench technology
  • Highest current capability in a standard package
  • Lowest switching and conduction losses
  • Robust packaging technology
  • 48 V automotive power MOSFETs solutions

  • Automotive power MOSFET