FCB11N60TM onsemi MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- onsemi
- Product name
- FCB11N60TM
- Product classification
- MOSFET
- RoHS
- RoHS
- Series name
- SuperFET(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-263-3|D2Pak|TO-263AB
- Drain to Source voltage
- 600V
- Continuous drain current
- 11A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 380mOhm
- Vgs(th)
- 5 V
- Gate Charge (Qg)
- 52nC
- Vgs (Max)
- 30V
- Input Capacitance (Ciss)
- 1490pF
- Power consumption
- 125W
- Operating temperature range
- -55 to 150C
- Other names
- 2156-FCB11N60TM | FCB11N60TM_NLCT | FCB11N60TM_NLTR-ND | FCB11N60TMDKR | FCB11N60TM_NLCT-ND | FCB11N60TM_NL | FCB11N60TMCT | FCB11N60TMCT-NDR | FCB11N60TMTR | FCB11N60TM_NLTR | FCB11N60TMTR-NDR
- Type
- Power MOSFET
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