BSC0904NSIATMA1 Infineon Technologies MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- BSC0904NSIATMA1
- Product classification
- MOSFET
- Lifecycle Status
- LTB
- RoHS
- RoHS
- Series name
- OptiMOS(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- 8-PowerTDFN
- Drain to Source voltage
- 30V
- Continuous drain current
- 20A/78A
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5|10V
- Drain to Source on-state resistance
- 3.7mOhm
- Vgs(th)
- 2 V
- Gate Charge (Qg)
- 17nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 1100pF
- Power consumption
- 2.5|37W
- Operating temperature range
- -55 to 150C
- Other names
- BSC0904NSIATMA1CT | BSC0904NSIDKR | BSC0904NSITR-ND | 2156-BSC0904NSIATMA1TR | BSC0904NSIATMA1TR | BSC0904NSIATMA1DKR | BSC0904NSIDKR-ND | BSC0904NSI-ND | BSC0904NSICT-ND | BSC0904NSICT | BSC0904NSI | SP000854384
- Remarks
- OptiMOS™
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 5000
- Related Products
-
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